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Fabrication of C₆₀ field-effect transistors with polyimide and Ba_0.4Sr_0.6Ti_0.96O₃ gate insulators

机译：用聚酰亚胺和Ba _{0.4 Sr _{0.6 Ti _{0.96 O _{3制备C _{60 场效应晶体管栅极绝缘体}}}}}

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Kubozono, Yoshihiro; Nagano, Takayuki; Haruyama, Yusuke; Kuwahara, Eiji; Takayanagi, Toshio; Ochi, Kenji; Fujiwara, Akihiko;
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1. Fabrication of C_(60) field-effect transistors with polyimide and Ba_(0.4)Sr_(0.6)Ti_(0.96)O_3 gate insulators [J] . Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Applied Physics Letters . 2005,第14期

机译：用聚酰亚胺和Ba_（0.4）Sr_（0.6）Ti_（0.96）O_3栅绝缘体制作C_（60）场效应晶体管
2. Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba_(0.6)Sr_(0.4)TiO_3 gate insulator [J] . Young-Bae Kim, Jeong-Ung Kim, Duck-Kyun Choi, Journal of electroceramics . 2009,第1期

机译：具有低漏电流的Ni掺杂Ba_（0.6）Sr_（0.4）TiO_3栅绝缘体的电稳定低压操作ZnO薄膜晶体管
3. Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator [J] . Young-Bae Kim, Jeong-Ung Kim, Duck-Kyun Choi, Journal of Electroceramics . 2009,第1期

机译：低漏电流掺Ni Ba0.6 Sr0.4 TiO3 栅绝缘体的电稳定低压工作ZnO薄膜晶体管
4. Ba_(0.6)Sr_(0.4)TiO_3 Thin Films Used as Gate Dielectric in Pentacene Transistors [C] . G.F. Dong, Y.X. Lu, X.Y. Wang, Thin Film Transistors 9 (TFT 9) . 2008

机译：Ba_（0.6）Sr_（0.4）TiO_3薄膜用作并五苯晶体管的栅介质
5. Fabrication and characterization of Silicon-on-insulator field-effect transistor-based nanoribbon sensors. [D] . Fernandes, Poornika Gayathri. 2011

机译：绝缘体上硅基场效应晶体管纳米带传感器的制造和表征。
6. P2-Na0.6Cr0.6Ti0.4O2 cation-disordered electrode for high-rate symmetric rechargeable sodium-ion batteries [O] . Yuesheng Wang, Ruijuan Xiao, Yong-Sheng Hu, -1

机译：用于高速对称可充电钠离子电池的P2-Na0.6 Cr0.6Ti0.4 O2阳离子无序电极
7. Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators [O] . Kubozono, Y, Nagano, T, Haruyama, Y, 2005

机译：使用聚酰亚胺和Ba_ <0.4> Sr_ <0.6> Ti _，<0.96> O_3栅绝缘体制造C_ <60>场效应晶体管
8. Performance Characteristics of In(0.6)Ga(0.4)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistor Monolithically Integrated with In(0.53)Ga(0.47)As p-i-n Photodiodes [R] . Zebda, Y., Bhattecharya, P. K., Pavlidis, D., 1990

机译：In（0.6）Ga（0.4）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管与In（0.53）Ga（0.47）as p-i-n光电二极管单片集成的性能特征

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

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Fabrication of C₆₀ field-effect transistors with polyimide and Ba_0.4Sr_0.6Ti_0.96O₃ gate insulators